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APTGT100H60T3 Full - Bridge Trench + Field Stop IGBT(R) Power Module 13 14 VCES = 600V IC = 100A* @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability Q1 18 19 CR1 CR3 Q3 11 10 22 23 Q2 7 8 CR4 Q4 26 27 CR2 4 3 29 15 30 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C V W Reverse Bias Safe Operating Area 200A @ 550V * Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-5 APTGT100H60T3 - Rev 0 May, 2005 Max ratings 600 150 * 100 * 200 20 340 Unit V A APTGT100H60T3 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 100A Tj = 150C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 100A R G = 10 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 100A R G = 10 Min Typ 6100 390 190 115 45 225 55 130 50 300 70 1.8 3.5 Max Unit pF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF trr Qrr Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions VR=600V 50% duty cycle Min 600 Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Typ Max 250 500 Unit V A A IF = 100A VGE = 0V IF = 100A VR = 300V di/dt =2000A/s 100 1.6 1.5 125 220 4.7 9.9 2 V ns C May, 2005 APT website - http://www.advancedpower.com 2-5 APTGT100H60T3 - Rev 0 APTGT100H60T3 Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.44 0.77 175 125 100 4.7 110 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M4 2500 -40 -40 -40 1.5 Package outline (dimensions in mm) APT website - http://www.advancedpower.com 3-5 APTGT100H60T3 - Rev 0 1 12 May, 2005 17 28 APTGT100H60T3 Typical Performance Curve 200 175 150 IC (A) Output Characteristics (V GE=15V) T J=25C TJ=125C Output Characteristics 200 175 150 IC (A) T J = 150C VGE=19V 125 100 75 50 25 0 0 0.5 1 TJ=25C T J=150C 125 100 75 50 25 0 V GE=13V VGE =15V VGE =9V 1.5 V CE (V) 2 2.5 3 0 0.5 1 1.5 2 V CE (V) 2.5 3 3.5 200 175 150 125 IC (A) 100 75 50 25 0 5 Transfert Characteristics 7 TJ=25C Energy losses vs Collector Current 6 5 E (mJ) 4 3 2 Er Eon V CE = 300V V GE = 15V RG = 10 T J = 150C Eoff Eon TJ=125C T J=150C TJ=25C 1 0 11 12 0 25 50 75 6 7 8 9 10 100 125 150 175 200 IC (A) V GE (V) Switching Energy Losses vs Gate Resistance 12 10 E (mJ) 8 6 4 Eon VCE = 300V VGE =15V IC = 100A TJ = 150C Reverse Bias Safe Operating Area 250 Eon 200 Eoff Eoff IC (A) 150 100 2 0 0 10 20 30 40 50 Gate Resistance (ohms) Er 50 0 60 0 VGE=15V T J=150C RG=10 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.5 Thermal Impedance (C/W) 0.4 0.3 0.5 0.2 0.1 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7 IGBT 0.05 0 0.00001 Rectangular Pulse Duration in Seconds APT website - http://www.advancedpower.com 4-5 APTGT100H60T3 - Rev 0 May, 2005 APTGT100H60T3 Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 ZCS VCE =300V D=50% RG=10 TJ=150C Forward Characteristic of diode 200 175 150 125 IC (A) 100 75 T J=125C T J=150C 80 60 40 20 0 0 25 50 75 IC (A) Hard switching ZVS Tc=85C 50 25 0 100 125 150 0 T J=25C 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.8 Thermal Impedance (C/W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Diode 0.05 0 0.00001 Rectangular Pulse Duration in Seconds APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGT100H60T3 - Rev 0 May, 2005 |
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